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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Interfacing, switching (30V, 100mA) 2SK3541SPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel 1.2~1.4 (1)(S1) SC-88/SOT-363 (D1)(6) (G1) (G2) (D2) 0.65 0.65 2.0~2.2 CONSTRUCTION Silicon N-Channel MOSFET 0.15~0.35 (3) (S2)(4) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT (6) D1 G2 S2(4) (1)S1 G1 D2(3) Dimensions in millimeters SC-88/SOT-363 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted 2SK3541SPT Units VDSS VGSS ID IDR Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed (Note1) Reverse Drain Current - Continuous - Pulsed (Note1) 30 V V mA mA mA mA mW C C 2007-02 20 100 400 100 400 150 -55 to 150 -55 to 150 PD TJ TSTG Power Dissipation (Note2) Operating Temperature Range Storage Temperature Range Note: 1. Pw < 10uA , Duty cycle < 1% 2. With each pin mounted on the recommended land RATING CHARACTERISTIC CURVES ( 2SK3541SPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10A VDS = 30 V, VGS = 0 V TC=125C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 1 0.5 1 -1 V A mA A A Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS VGS(th) RDS(ON) Gate Threshold Voltage VDS = 3V, ID = 100 A 0.8 5.0 7.0 20 1.65 8.0 13 V Static Drain-Source On-Resistance VGS = 4.0 V, ID = 10 mA VGS = 2.5 V, ID = 1.0 mA mS gFS Forward Transconductance VDS = 3.0 V , ID = 10 m A DYNAMIC CHARACTERISTICS Ciss Coss Crss ton tr toff tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 13 9 4 pF VDD = 5.0 V, RL = 500 , ID = 10 mA, VGS = 5.0 V, RGEN = 10 VDD = 5.0 V, RL = 500 , ID = 10 mA, VGS = 5.0 V, RGEN = 10 15 35 80 80 nS Turn-Off Time nS RATING CHARACTERISTIC CURVES ( 2SK3541SPT ) Typical Electrical Characteristics FIG. 1 TYPICAL TRANSFER CHARACTERISTICS FIG. 2 REVERSE DRAIN CURRENT V.S SOURCE-DRAIN VOLTAGE 200m 100m DRAIN CURRENT : ID (A) REVERSE DRAIN CURRENT : IDR (A) VDS=3V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=0V Pulsed 50m 20m 10m 5m 2m 1m 0.5m Ta=125C 75C 25C -25C Ta=125C 75C 25C -25C 0.2m 0.1m 0 1 2 3 4 0 0.5 1 1.5 GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) FIG. 3 GATE THRESHOLD VOLTAGE V.S CHANNEL TEMPERATURE GATE THRESHOLD VOLTAGE : VGS(th) (V) 2 VDS=3V ID=0.1mA Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 1.5 FIG. 4 FROWARD TRANSFER ADMITTANCE V.S DRAIN CURRENT 0.5 VDS=3V Pulsed 0.2 Ta=-25C 0.1 25C 75C 0.05 125C 1 0.02 0.01 0.005 0.002 0.5 0 -50 -25 0 25 50 75 100 125 150 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) RATING CHARACTERISTIC CURVES ( 2SK3541SPT ) Typical Electrical Characteristics (continued) FIG. 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE V.S DRAIN CURRENT FIG. 6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE V.S DRAIN CURRENT 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 Ta=125C 75C 25C -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=4V Pulsed 50 Ta=125C 75C 25C -25C VGS=2.5V Pulsed 20 10 5 2 1 0.5 0.001 0.002 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) |
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